学术报告（4月22日）

报告时间：2015年4月22日（星期三） 下午4:00-5:00

主持人：包定华 教授

欢迎广大师生踊跃参加！

报告摘要：

Generally, a resistive switching device exhibits reversible electric field induced resistance switching between the low resistance state and high resistance state. The basic structure of the device is a combination of metal-insulator-metal (M-I-M), where the insulator represents resistive switching materials. These materials can be a binary oxide, perovskite oxide, solid state electrolyte or organic molecular material. The resistive switching behavior of the oxide device heavily depends on the processing method and parameters, film composition and dopant, crystalline structure, microstructure, surface morphology, film thickness, electrode material and embedded layer. The review of these factors that influence resistive thin film properties based on reported literature is included in the talk. Various models such as charge transfer, Schottky barrier modulation, cation migration, and conducting filaments were proposed to interpret the origin of the resistive switching behavior. This talk will also describe and discuss these switching mechanisms.

报告人简介：

Dr. Tseung-Yuen Tseng received his Ph.D. degree from Purdue University. He is a Lifetime Chair Professor of Electronics Engineering, National Chiao Tung University.

He is IEEE Fellow (2002) and Fellow of the American Ceramic Society (1998).

Dr. Tseng has published over 335 research papers in refereed international journals and 130 conference papers (over 60 keynote or invited talks), 7 books, and held 30 patents. He is Associate Editor of Journal of Nanoscience and Nanotechnology and International Journal of Applied Ceramic Technology. He is a chair of the Board of Asian Ferroelectrics Association. Dr. Tseng has received Hou Chin-Tui Distinguished Honor Award (2002), Dr. Sun Yat-Sen Academic Award (2003), TECO Technology Award (2004), IEEE CPMT Exceptional Technical Achievement Award (2005), Distinguished Research Award of Pan Wen Yuan Foundation (2006), Medal of Chih-Hung Lu (2010), and IEEE CPMT Outstanding Sustained Technical Contribution Award (2012).