学术报告（4月10日）

主持人：刘  扬 教授

报告时间：2015年4月10日（星期五） 上午10:00

报告摘要：

A low-temperature ohmic contact process with an inductively-coupled plasma (ICP) treatment is proposed to low down the ohmic annealing temperature of GaN-based electron devices. By optimizing the ICP treating conditions and the annealing temperature, Al-based ohmic contact with a contact resistance of 0.59 Ωmm was obtained when annealed at a temperature lower than 600℃. A gate-first AlGaN/GaN heterostructure field-effect transistor (HFET) fabricated using this technology possessed a low gate leakage, high drain current density and high transconductance. Using the similar technology, a self-aligned gate AlGaN/GaN HFET was also developed. A gate-first GaN metal-oxide-semiconductor field-effect transistor (MOSFET) based on a non-annealing ohmic process will be reported.

报告人简介：

Dr. Jin-Ping Ao received his B. S. degree in physics in Wuhan University in 1989, Wuhan, M. S. degree in semiconductor physics and semiconductor device physics in Hebei Semiconductor Research Institute (HSRI) in 1992, Shijiazhuang, and Ph. D. degree in electronic engineering from Jilin University in 2000, Changchun, China. He joined HSRI in 1992, working on high-speed compound semiconductor devices and integrated circuits, optoelectronic devices and optoelectronic integrated circuits. He joined The University of Tokushima, Japan, in Feb 2001, and currently he is an associate professor involved in the research and development of wide bandgap semiconductor electronic devices, monolithic integrated circuits, chemical sensor and optoelectronic devices. He published more than 130 papers in international journals and conferences. Dr. Ao is a senior member of the IEEE and a member of The Electrochemical Society, The Japan Society of Applied Physics and The Institute of the Electronics, Information and Communication Engineers.