学术预告 | 广东省磁电物性分析与器件重点实验室学术讲座(第三十期)：外场下拓扑态的理论设计

To facilitate the design and application of high-performance quantum devices, it is crucial to explore the control of topological quantum states at the microscopic level under the coupling mechanism of multiple degrees of freedom. In this talk, we will introduce our recent work about theoretical design of topological states under external fields. 1. Based on first-principles calculations, effective model analysis, and Floquet theory, we can obtain light-induced topological states (such as quantum anomalous Hall effects with highly tunable Chern number, higher-order topological Anderson insulator, and higher-order Weyl semimetals) with novel mechanisms and further towards realizing these topological states in realistic materials. 2. We propose a formation mechanism of high-order topological insulators driven by antiferromagnetic exchange interactions, and this higher-order topological states can be realized in (MnBi2Te4)(Bi2Te3)m superlattice thin films.

王锐，重庆大学bet亚洲登录官方网站/量子材料与器件研究中心教授、bet亚洲登录官方网站副院长，国家优秀青年基金获得者、重庆杰出青年基金获得者、重庆市青年拔尖人才。2003年至2012年在重庆大学学习，获得学士、硕士、博士学位。2012年博士毕业留校任教，历任讲师、副教授，2020年评为教授。近年来，从事计算与理论凝聚态物理研究，通过理论建模与数值计算，并结合对称性分析、有效模型等理论方法，围绕拓扑物态与拓扑材料的理论设计与量子调控等科学问题开展了一系列研究，相关研究成果已经知名物理期刊发表论文50余篇，包括Physical Review Letters 5篇，Nature Communications 2篇, Nano Letters 3篇，Physical Review B 30余篇。先后主持国家自然基金项目5项，重庆市研究生导师团队负责人，中国物理学会科普工作委员会委员，获得教育部博士学术新人奖。